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Si4622DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
FEATURES
8.0 e
8.0 e
Channel-1
Channel-2
V DS (V)
30
30
R DS(on) ( Ω )
0.0160 at V GS = 10 V
0.0186 at V GS = 4.5 V
0.0264 at V GS = 10 V
0.0290 at V GS = 4.5 V
I D (A) a Q g (Typ.)
19
8.0 e
6
8.0 e
? Halogen-free According to IEC 61249-2-21
Definition
? SkyFET ? Monolithic TrenchFET ?
Power MOSFET and Schottky Diode
? 100 % R g and UIS Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Notebook Logic DC-DC
? Low Current DC-DC
SO-8
D 1
D 2
S 1
G 1
1
2
8
7
D 1
D 1
S 2
3
6
D 2
G 1
Schottky Diode
G 2
G 2
4
Top View
5
D 2
S 1
S 2
Ordering Information: Si4622DY-T1-E3 (Lead (Pb)-free)
Si4622DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Channel-1
30
± 20
8 e
Channel-2
30
± 16
8 e
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
8 e
8 b, c, e
6.7
6.7 b, c
Pulsed Drain Current (10 μs Pulse Width)
Source-Drain Current Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
7.2 b, c
60
2.8
1.8 b, c
25
31.2
5.3 b, c
30
2.6
1.7 b, c
15
11.2
A
mJ
T C = 25 °C
3.3
3.1
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
2.1
2.2 b, c
2.0
2.0 b, c
W
T A = 70 °C
1.4 b, c
1.3 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ. Max.
Typ. Max.
Unit
Maximum Junction-to-Ambient b, d t ≤ 10 s
Maximum Junction-to-Foot (Drain) Steady State
R thJA
R thJF
45
29
56
38
55
33
62.5
40
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W (Channel-1) and 110 °C/W (Channel-2).
e. Package limited.
Document Number: 68695
S09-0764-Rev. B, 04-May-09
www.vishay.com
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